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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A DESCRIPTION *With TO-3 package *High voltage ,high speed APPLICATIONS *Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1400 500 6 3.5 1.0 50 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1170A TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 500 V VCEsat VBEsat Collector-emitter saturation voltage IC=2.5A; IB=0.6A IC=2.5A; IB=0.6A 10 V Base-emitter saturation voltage 1.2 V ICES Collector cut-off current VCE=1400V; VBE=0 1.0 mA A A ICBO Collector cut-off current VCB=800V; IE=0 20 IEBO Emitter cut-off current VEB=5V; IC=0 20 hFE-1 DC current gain IC=0.5A ; VCE=10V 10 hFE-2 fT DC current gain IC=3A ; VCE=10V IC=0.5A ; VCE=10V 5 Transition frequency 4 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1170A Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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